On the ordering in new low gap semiconductors: PtSnS, PtSnSe, PtSnTe. Experimental and DFT studies

Weihrich, Richard and Kurowski, Daniel and Stueckl, Andrea C. and Matar, Samir F. and Rau, Franz and Bernert, Thomas (2004) On the ordering in new low gap semiconductors: PtSnS, PtSnSe, PtSnTe. Experimental and DFT studies. JOURNAL OF SOLID STATE CHEMISTRY, 177 (7). pp. 2591-2599. ISSN 0022-4596,

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Abstract

The crystallographic and electronic structures of PtSnS, PtSnSe and PtSnTe were investigated by X-ray structure analysis and density functional theory (DFT) calculations. Conductivity measurements and diffraction patterns show semiconducting ordered pyrite type related compounds containing SnX (X = S, Se, Te) entities. A scheme is presented to model ordered variants according to the relative orientation of the XY dumbbells. It represents the ullmannite, the cobaltite and a new rhombohedral structure type. The scheme allows for a systematic investigation of ordering preferences from first principles. According to the total electronic energy PtSnTe and PtSnSe prefer the cobaltite, PtSnS the rhombohedral structure type. The structural and electronic properties agree with experimental results. The three compounds are predicted to be narrow gap indirect semiconductors from conductivity measurements and band structure calculations. (C) 2004 Elsevier Inc. All rights reserved.

Item Type: Article
Uncontrolled Keywords: TOTAL-ENERGY CALCULATIONS; COBALTITE STRUCTURE; CRYSTAL-STRUCTURE; PTGESE; SYSTEMS; TRENDS; SE; TE; platinum chalcogenide semiconductors; pyrite structure; ordering variants; electronic structure
Subjects: 500 Science > 540 Chemistry & allied sciences
Divisions: Chemistry and Pharmacy > Institut für Anorganische Chemie > Arbeitskreis Dr. Richard Weihrich
Depositing User: Dr. Gernot Deinzer
Date Deposited: 12 Jul 2021 08:50
Last Modified: 12 Jul 2021 08:50
URI: https://pred.uni-regensburg.de/id/eprint/37506

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