Kuemmler, Volker and Lell, A. and Haerle, V. and Schwarz, Ulrich T. and Schoedl, T. and Wegscheider, Werner (2004) Gradual facet degradation of (Al,In)GaN quantum well lasers. APPLIED PHYSICS LETTERS, 84 (16). pp. 2989-2991. ISSN 0003-6951
Full text not available from this repository. (Request a copy)Abstract
In our study, III-nitride laser diodes with uncoated facets obtained by cleavage show a much faster degradation than coated ones. An increase in threshold current and drop of slope efficiency suggest increased absorption losses. Degradation experiments in different atmospheres prove the influence of the respective atmosphere and indicate the growth of an oxide film leading to increased absorption. Because the observed degradation is insensitive to the photon density we suggest nonradiative centers, which are saturated at low photon densities, to be at the origin of degradation. No evidence for photon enhanced degradation of coated laser diodes was found. A dielectric coating efficiently protects the facets. (C) 2004 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | DIODES; OXIDATION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Jul 2021 08:30 |
| Last Modified: | 21 Jul 2021 08:30 |
| URI: | https://pred.uni-regensburg.de/id/eprint/37741 |
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