Bormann, I. and Brunner, K. and Hackenbuchner, S. and Abstreiter, G. and Schmult, S. and Wegscheider, Werner (2003) Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures. APPLIED PHYSICS LETTERS, 83 (26). pp. 5371-5373. ISSN 0003-6951, 1077-3118
Full text not available from this repository.Abstract
Here, we explore experimentally and theoretically the possibility to prolong the upper hole state nonradiative lifetime of Si/SiGe quantum cascade (QC) structures by using a spatially indirect diagonal transition between two SiGe quantum well ground states. With the recent observation of well resolved midinfrared electroluminescence from heavy hole intersubband transitions in Si/SiGe valence-band QC structures, a Si-based QC laser seems no longer to be out of reach. A long carrier lifetime and maybe population inversion, however, appear to be impossible for structure designs with a vertical intersubband transition studied so far. This is due to the nonresonant behavior of deformation potential scattering dominant in unipolar SiGe. We report on calculations of the band structure using a six-band k.p model and of hole deformation potential scattering that predict significantly increased nonradiative lifetimes for large barrier thickness, reaching about 20 ps for 35 A Si barrier layer width. Electroluminesence measurements of a series of QC structures with varied barrier width reveal comparable efficiencies and the deduced lifetimes confirm our model calculations. (C) 2003 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | INTERSUBBAND ELECTROLUMINESCENCE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 27 Jul 2021 09:37 |
| Last Modified: | 27 Jul 2021 09:37 |
| URI: | https://pred.uni-regensburg.de/id/eprint/38303 |
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