Schwarz, U. T. and Sturm, E. and Wegscheider, Werner and Kuemmler, V. and Lell, A. and Haerle, V. (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. APPLIED PHYSICS LETTERS, 83 (20). pp. 4095-4097. ISSN 0003-6951, 1077-3118
Full text not available from this repository.Abstract
Adapting the Hakki Paoli method to group III nitrides, we measure gain, differential gain, carrier-induced change of refractive index, carrier-induced phase shift, and the antiguiding factor. Our measurements also cover the low-carrier-density regime, in which spontaneous and piezoelectric fields and Coulomb interaction are only partially screened. This regime is most interesting as a comparison with existing theoretical simulations, including many-body effects. (C) 2003 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | GAN; DEGRADATION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 27 Jul 2021 11:10 |
| Last Modified: | 27 Jul 2021 11:10 |
| URI: | https://pred.uni-regensburg.de/id/eprint/38401 |
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