Lin, Zhong and McCreary, Amber and Briggs, Natalie and Subramanian, Shruti and Zhang, Kehao and Sun, Yifan and Li, Xufan and Borys, Nicholas J. and Yuan, Hongtao and Fullerton-Shirey, Susan K. and Chernikov, Alexey and Zhao, Hui and McDonnell, Stephen and Lindenberg, Aaron M. and Xiao, Kai and LeRoy, Brian J. and Drndic, Marija and Hwang, James C. M. and Park, Jiwoong and Chhowalla, Manish and Schaak, Raymond E. and Javey, Ali and Hersam, Mark C. and Robinson, Joshua and Terrones, Mauricio (2016) 2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications. 2D MATERIALS, 3 (4): 042001. ISSN 2053-1583
Full text not available from this repository. (Request a copy)Abstract
The rise of two-dimensional (2D) materials research took place following the isolation of graphene in 2004. These new 2D materials include transition metal dichalcogenides, mono-elemental 2D sheets, and several carbide-and nitride-based materials. The number of publications related to these emerging materials has been drastically increasing over the last five years. Thus, through this comprehensive review, we aim to discuss the most recent groundbreaking discoveries as well as emerging opportunities and remaining challenges. This review starts out by delving into the improved methods of producing these new 2D materials via controlled exfoliation, metal organic chemical vapor deposition, and wet chemical means. We look into recent studies of doping as well as the optical properties of 2D materials and their heterostructures. Recent advances towards applications of these materials in 2D electronics are also reviewed, and include the tunnel MOSFET and ways to reduce the contact resistance for fabricating high-quality devices. Finally, several unique and innovative applications recently explored are discussed as well as perspectives of this exciting and fast moving field.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | TRANSITION-METAL DICHALCOGENIDES; FIELD-EFFECT TRANSISTORS; DER-WAALS HETEROSTRUCTURES; MONOLAYER MOLYBDENUM-DISULFIDE; SINGLE-LAYER MOS2; CHEMICAL-VAPOR-DEPOSITION; THIN-FILM TRANSISTORS; GIANT BANDGAP RENORMALIZATION; FLEXIBLE PRINTED ELECTRONICS; HYDROGEN EVOLUTION REACTION; 2D materials; transition metal dichalcogenides; review |
| Subjects: | 500 Science > 530 Physics 600 Technology > 600 Technology (Applied sciences) |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Junior Research Group Alexey Chernikov |
| Depositing User: | Petra Gürster |
| Date Deposited: | 28 Aug 2020 08:40 |
| Last Modified: | 28 Aug 2020 08:40 |
| URI: | https://pred.uni-regensburg.de/id/eprint/3844 |
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