Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

Bel'kov, V. V. and Ganichev, Sergey D. and Schneider, Petra and Back, Christian H. and Oestreich, M. and Rudolph, J. and Haegele, D. and Golub, L. E. and Wegscheider, Werner and Prettl, W (2003) Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells. SOLID STATE COMMUNICATIONS, 128 (8). pp. 283-286. ISSN 0038-1098, 1879-2766

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Abstract

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-hand excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account Spin splitting of conduction and valence bands. (C) 2003 Elsevier Ltd. All rights reserved.

Item Type: Article
Uncontrolled Keywords: SPIN ORIENTATION; ELECTRONS; TRANSPORT; CRYSTALS; quantum wells; spin-orbit effects
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Chair Professor Back > Group Christian Back
Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Depositing User: Dr. Gernot Deinzer
Date Deposited: 27 Jul 2021 13:06
Last Modified: 27 Jul 2021 13:06
URI: https://pred.uni-regensburg.de/id/eprint/38497

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