Kondovych, Svitlana and Luk'yanchuk, Igor and Baturina, Tatyana I. and Vinokur, Valerii M. (2017) Gate-tunable electron interaction in high-kappa dielectric films. SCIENTIFIC REPORTS, 7: 42770. ISSN 2045-2322,
Full text not available from this repository. (Request a copy)Abstract
The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-kappa) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. We find that by reducing the distance from the gate to the film, we decrease the spatial range of the 2D long-range logarithmic interaction, changing it to predominantly dipolar or even to exponential one at lateral distances exceeding the dimension of the film-gate separation. Our findings offer a unique laboratory for the in-depth study of topological phase transitions and related phenomena that range from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | METAL-INSULATOR-TRANSITION; TIN FILMS; SUPERINSULATOR; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Christoph Strunk |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Dec 2018 13:01 |
| Last Modified: | 25 Feb 2019 11:22 |
| URI: | https://pred.uni-regensburg.de/id/eprint/385 |
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