Rogge, M. C. and Fuehner, C. and Keyser, U. F. and Haug, R. J. and Bichler, M. and Abstreiter, G. and Wegscheider, Werner (2003) Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots. APPLIED PHYSICS LETTERS, 83 (6). pp. 1163-1165. ISSN 0003-6951
Full text not available from this repository.Abstract
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows fabrication of robust in-plane gates and Cr/Au top-gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements. (C) 2003 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | COULOMB-BLOCKADE; TRANSISTOR; OXIDATION; TRANSPORT; CHANNEL; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 04 Aug 2021 12:18 |
| Last Modified: | 04 Aug 2021 12:18 |
| URI: | https://pred.uni-regensburg.de/id/eprint/38728 |
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