Sztucki, M. and Schuelli, T. U. and Metzger, T. H. and Chamard, V. and Schuster, R. and Schuh, D. (2003) Strain analysis of a quantum-wire system produced by cleaved edge overgrowth using grazing incidence x-ray diffraction. APPLIED PHYSICS LETTERS, 83 (5). pp. 872-874. ISSN 0003-6951
Full text not available from this repository.Abstract
A GaAs surface layer of 10 nm thickness was grown on the cleaved edge of an In0.1Al0.9As/Al0.33Ga0.67As multilayer in order to induce a lateral periodic strain modulation. We apply surface sensitive grazing incidence x-ray diffraction to distinguish between compositional/morphological and purely strain induced modulations. The experimentally determined strain profile is confirmed by finite-element model calculations. The GaAs layer is found to be purely strain modulated with an average lattice parameter change of (0.8+/-0.1)% with respect to relaxed GaAs. (C) 2003 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ASSEMBLED GE ISLANDS; NANOSTRUCTURES; EPITAXY; SURFACE; WELLS; GAAS; GAS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 04 Aug 2021 12:30 |
| Last Modified: | 04 Aug 2021 12:30 |
| URI: | https://pred.uni-regensburg.de/id/eprint/38733 |
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