Klappenberger, Florian and Renk, Karl F. and Summer, R. and Keldysh, L. and Rieder, B. and Wegscheider, Werner (2003) Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization. APPLIED PHYSICS LETTERS, 83 (4). pp. 704-706. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 mum, diameter 1 mum) was embedded between n(+) GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The breakdown was indicated by a sudden current rise and voltage drop and a hysteresis effect and, furthermore, by electron-hole recombination radiation. We reached the threshold field for ionization by making use of a high-field domain whose formation was based on the Gunn effect. The microcrystal could reproducibly be switched into the nonequilibrium avalanche state. Our analysis indicates that the effect provides a basis for the development of an ultrafast electric switch. (C) 2003 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SEMICONDUCTORS; DEVICES; DIODES; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Karl F. Renk Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 05 Aug 2021 05:52 |
| Last Modified: | 05 Aug 2021 05:52 |
| URI: | https://pred.uni-regensburg.de/id/eprint/38810 |
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