Abe, Atsutoshi and Yamashita, Koichi and Saalfrank, Peter (2003) STM and laser-driven atom switch: An open-system density-matrix study of H/Si(100). PHYSICAL REVIEW B, 67 (23): 235411. ISSN 1098-0121
Full text not available from this repository.Abstract
A recently proposed single atom switch, experimentally realized with a scanning tunneling microscope (STM) for H on a Si(100) surface [U.J. Quaade , Surf. Sci. 415, L1037 (1998)], is examined here theoretically. Using a two-state model and open-system density matrix theory which includes both electronic and vibrational relaxation of the adsorbate, we argue that the switching is dominated by tunneling in the ground state. The model accounts for observed isotope and, qualitatively, for temperature effects. We suggest that also a laser-driven H switch should be possible.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | DISSIPATIVE ENVIRONMENT; BOND BREAKING; DYNAMICS; SURFACE; DESORPTION; HYDROGEN; EXCITATION; MECHANISM; SILICON; |
| Subjects: | 500 Science > 540 Chemistry & allied sciences |
| Divisions: | Chemistry and Pharmacy > Institut für Physikalische und Theoretische Chemie |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 11 Aug 2021 04:58 |
| Last Modified: | 11 Aug 2021 04:58 |
| URI: | https://pred.uni-regensburg.de/id/eprint/38897 |
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