In situ control of electron gas dimensionality in freely suspended semiconductor membranes

Hoehberger, Eva M. and Kraemer, Tomas and Wegscheider, Werner and Blick, Robert H. (2003) In situ control of electron gas dimensionality in freely suspended semiconductor membranes. APPLIED PHYSICS LETTERS, 82 (23). pp. 4160-4162. ISSN 0003-6951, 1077-3118

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Abstract

We present fabrication and measurements of gated suspended low-dimensional electron systems. The core component of the device is a low-dimensional electron gas embedded in a free-standing beam processed from a GaAs/AlGaAs heterostructure. The dimensionality of the electronic system is fully controlled by a number of gating electrodes on the suspended membranes. Operation in the quantum Hall regime, in the one-dimensional case, and as zero-dimensional quantum dots is demonstrated. The resulting devices can be applied as ultrasensitive bolometers and as nanoelectromechanical circuits that reach the ultimate limits of displacement detection. (C) 2003 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: THERMAL CONDUCTANCE; QUANTUM; MAGNETOTRANSPORT; SYSTEMS;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Depositing User: Dr. Gernot Deinzer
Date Deposited: 11 Aug 2021 05:40
Last Modified: 11 Aug 2021 05:40
URI: https://pred.uni-regensburg.de/id/eprint/38904

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