Perel', V. I. and Tarasenko, S. A. and Yassievich, I. N. and Ganichev, Sergey D. and Bel'kov, V. V. and Prettl, Wilhelm (2003) Spin-dependent tunneling through a symmetric semiconductor barrier. PHYSICAL REVIEW B, 67 (20): 201304. ISSN 2469-9950, 2469-9969
Full text not available from this repository. (Request a copy)Abstract
The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k(3) Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRON-GAS; HETEROSTRUCTURES; INJECTION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 11 Aug 2021 05:53 |
| Last Modified: | 11 Aug 2021 05:53 |
| URI: | https://pred.uni-regensburg.de/id/eprint/39007 |
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