Schwarz, U. T. and Schuck, P. J. and Mason, M. D. and Grober, R. D. and Roskowski, A. M. and Einfeldt, S. and Davis, R. F. (2003) Microscopic mapping of strain relaxation in uncoalesced pendeoepitaxial GaN on SiC. PHYSICAL REVIEW B, 67 (4): 045321. ISSN 1098-0121
Full text not available from this repository.Abstract
Mapping of the strain distribution in uncoalesced pendeoepitaxial GaN on SiC by spatially resolved micro-Raman and microphotoluminescence, and lattice constants measured by high-resolution x-ray diffraction provide a consistent picture of relaxation of inhomogeneous and anisotropic strain. The pendeoepitaxial wings show a nearly complete strain relaxation and high optical quality with extremely narrow donor bound exciton peaks. The narrow exciton linewidths result in the determination of c-axis strain to an accuracy of 6x10(-6).
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | RAMAN-SPECTROSCOPY; FILMS; PHOTOLUMINESCENCE; OVERGROWTH; GROWTH; LAYERS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 25 Aug 2021 10:07 |
| Last Modified: | 25 Aug 2021 10:07 |
| URI: | https://pred.uni-regensburg.de/id/eprint/39358 |
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