Ciorga, M. (2016) Electrical spin injection and detection in high mobility 2DEG systems. JOURNAL OF PHYSICS-CONDENSED MATTER, 28 (45): 453003. ISSN 0953-8984, 1361-648X
Full text not available from this repository. (Request a copy)Abstract
In this review paper we present the current status of research related to the topic of electrical spin injection and detection in two-dimensional electron gas (2DEG) systems, formed typically at the interface between two III-V semiconductor compounds. We discuss both theoretical aspects of spin injection in case of ballistic transport as well as give an overview of available reports on spin injection experiments performed on 2DEG structures. In the experimental part we focus particularly on our recent work on all-semiconductor structures with a 2DEG confined at an inverted GaAs/(Al, Ga) As interface and with a ferromagnetic semiconductor (Ga, Mn) As employed as a source of spin-polarized electrons.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FIELD-EFFECT TRANSISTOR; FERROMAGNET-SEMICONDUCTOR INTERFACE; ROOM-TEMPERATURE; GIANT MAGNETORESISTANCE; GALLIUM-ARSENIDE; METAL INTERFACE; QUANTUM-WELLS; GATE CONTROL; TRANSPORT; PRECESSION; 2DEG; spin injection; spin transport; spintronics |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Petra Gürster |
| Date Deposited: | 27 Aug 2020 09:46 |
| Last Modified: | 27 Aug 2020 09:46 |
| URI: | https://pred.uni-regensburg.de/id/eprint/3945 |
Actions (login required)
 |
View Item |
