Selig, Malte and Berghaeuser, Gunnar and Raja, Archana and Nagler, Philipp and Schueller, Christian and Heinz, Tony F. and Korn, Tobias and Chernikov, Alexey and Malic, Ermin and Knorr, Andreas (2016) Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides. NATURE COMMUNICATIONS, 7: 13279. ISSN 2041-1723,
Full text not available from this repository. (Request a copy)Abstract
Atomically thin transition metal dichalcogenides are direct-gap semiconductors with strong light-matter and Coulomb interactions. The latter accounts for tightly bound excitons, which dominate their optical properties. Besides the optically accessible bright excitons, these systems exhibit a variety of dark excitonic states. They are not visible in the optical spectra, but can strongly influence the coherence lifetime and the linewidth of the emission from bright exciton states. Here, we investigate the microscopic origin of the excitonic coherence lifetime in two representative materials (WS2 and MoSe2) through a study combining microscopic theory with spectroscopic measurements. We show that the excitonic coherence lifetime is determined by phonon-induced intravalley scattering and intervalley scattering into dark excitonic states. In particular, in WS2, we identify exciton relaxation processes involving phonon emission into lower-lying dark states that are operative at all temperatures.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LAYER MOS2; QUANTUM KINETICS; WSE2; PHOTOLUMINESCENCE; SEMICONDUCTORS; SPECTROSCOPY; |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Lupton > Group Christian Schüller |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 12 Apr 2019 11:19 |
| Last Modified: | 12 Apr 2019 11:32 |
| URI: | https://pred.uni-regensburg.de/id/eprint/3961 |
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