Wilamowski, Z. and Jantsch, W. and Malissa, H. and Roessler, Ulrich (2002) Evidence and evaluation of the Bychkov-Rashba effect in SiGe/Si/SiGe quantum wells. PHYSICAL REVIEW B, 66 (19): 195315. ISSN 1098-0121
Full text not available from this repository.Abstract
From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g factor. Both can be explained consistently employing the Bychkov-Rashba (BR) term H-BR=alpha(kxsigma).e(z), which turns out here to be the dominant coupling between electron orbital motion and spin. We obtain a BR parameter of alpha=0.55x10(-12) eV cm-three orders of magnitude smaller than in quantum well structures based on III-V semiconductors, consistent with the much smaller spin-orbit coupling in Si.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | METAL-INSULATOR TRANSITIONS; GATED SEMICONDUCTORS; SPIN-RESONANCE; ELECTRON-GAS; HETEROSTRUCTURES; LAYERS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 26 Aug 2021 11:55 |
| Last Modified: | 26 Aug 2021 11:55 |
| URI: | https://pred.uni-regensburg.de/id/eprint/39667 |
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