Terent'ev, Ya. V. and Danilov, S. N. and Durnev, M. V. and Loher, J. and Schuh, D. and Bougeard, D. and Ivanov, S. V. and Ganichev, S. D. (2017) Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies. JOURNAL OF APPLIED PHYSICS, 121 (5): 053904. ISSN 0021-8979, 1089-7550
Full text not available from this repository.Abstract
A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band k.p method, and the g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying the tilted magnetic field. Published by AIP Publishing.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRON G-FACTOR; SEMICONDUCTOR NANOSTRUCTURES; TRANSPORT-PROPERTIES; INAS; PHOTOLUMINESCENCE; HETEROSTRUCTURE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Dec 2018 13:01 |
| Last Modified: | 26 Feb 2019 13:10 |
| URI: | https://pred.uni-regensburg.de/id/eprint/401 |
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