Kreuzer, S. and Moser, J. and Wegscheider, Werner and Weiss, Dieter and Bichler, M. and Schuh, Dieter (2002) Spin polarized tunneling through single-crystal GaAs(001) barriers. APPLIED PHYSICS LETTERS, 80 (24). pp. 4582-4584. ISSN 0003-6951, 1077-3118
Full text not available from this repository. (Request a copy)Abstract
We investigate spin-dependent transport through an epitaxial GaAs(001) barrier sandwiched between polycrystalline iron films. Electron transport through the barrier is dominated by quantum mechanical tunneling, demonstrated by a nonlinear I-V characteristic, an exponential dependence of the tunneling current on the barrier thickness and the temperature dependence of the current. Though small a clear tunneling magnetoresistance effect proves spin-dependent transport through the Fe-GaAs interface. The small size of the effect and the high-field magnetoresistance suggest that spin-flip scattering plays a decisive role in transport. (C) 2002 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | INJECTION; JUNCTIONS; FILMS; FE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 19 Oct 2021 07:10 |
| Last Modified: | 19 Oct 2021 07:10 |
| URI: | https://pred.uni-regensburg.de/id/eprint/40153 |
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