Control of the dipole domain propagation in a GaAs/AlAs superlattice with a high-frequency field

Schomburg, Ekkehard and Hofbeck, K. and Scheuerer, R. and Haeussler, M. and Renk, K. F. and Jappsen, A. K. and Amann, A. and Wacker, A. and Schoell, E. and Pavel'ev, D. G. and Koschurinov, Y. (2002) Control of the dipole domain propagation in a GaAs/AlAs superlattice with a high-frequency field. PHYSICAL REVIEW B, 65 (15): 155320. ISSN 1098-0121

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Abstract

We observed that the propagation of a dipole domain in a GaAs/AlAs superlattice can be controlled by an external high-frequency field. The doped GaAs/AlAs superlattice showed a negative differential conductance giving rise to propagating dipole domains. Depending on the frequency of the high-frequency field, either frequency-locked or quasiperiodic propagating domain states occurred. The behavior can be described by a "devil's staircase," where in the locked state the ratio of the external frequency and the domain transit frequency is a rational number. A theoretical analysis indicates that the high-frequency field controls the domain propagation by a modification of both the domain velocity and the shedding of the domains from the cathode.

Item Type: Article
Uncontrolled Keywords: MINIBAND SEMICONDUCTOR SUPERLATTICES; SUSTAINED CURRENT OSCILLATION; DRIVEN GUNN-DIODES; SELF-OSCILLATIONS; LASER FIELDS; CHAOS; TRANSPORT; SYNCHRONIZATION; BIFURCATION;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 02 Nov 2021 07:52
Last Modified: 02 Nov 2021 07:52
URI: https://pred.uni-regensburg.de/id/eprint/40382

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