Plank, H. and Danilov, S. N. and Bel'kov, V. V. and Shalygin, V. A. and Kampmeier, J. and Lanius, M. and Mussler, G. and Gruetzmacher, D. and Ganichev, S. D. (2016) Opto-electronic characterization of three dimensional topological insulators. JOURNAL OF APPLIED PHYSICS, 120 (16): 165301. ISSN 0021-8979, 1089-7550
Full text not available from this repository.Abstract
We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)(2)Te-3 based three dimensional (3D) topological insulators (TIs). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneities in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers. Published by AIP Publishing.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MOLECULAR-BEAM EPITAXY; SINGLE DIRAC CONE; THIN-FILMS; DEEP IMPURITIES; BI2TE3 FILMS; SURFACE; BI2SE3; TRANSPORT; SB2TE3; GROWTH; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 24 Apr 2019 11:09 |
| Last Modified: | 24 Apr 2019 11:09 |
| URI: | https://pred.uni-regensburg.de/id/eprint/4076 |
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