Microscopic interface asymmetry and spin-splitting of electron subbands in semiconductor quantum structures

Roessler, Ulrich and Kainz, J. (2002) Microscopic interface asymmetry and spin-splitting of electron subbands in semiconductor quantum structures. SOLID STATE COMMUNICATIONS, 121 (6-7): PII S0038-. pp. 313-316. ISSN 0038-1098

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Abstract

The microscopic inter-face asymmetry of (001)-grown semiconductor heterostructures that gives rise to heavy-light hole coupling even at zero in-plane wave vector k(parallel to), modifies also the subband dispersion of confined electrons. Starting from a multiband envelope formulation we apply matrix perturbation theory to derive explicit expressions caused by this interface asymmetry, which in the 2 X 2 conduction band Hamiltonian appear as a warping and a spin-splitting term. The warping term results in an inequivalence of the dispersion along [110] and [1 (1) over bar0] as required by the microscopic C-2v symmetry, while the spin-splitting term has the same structure as the corresponding term derived from the zinc-blende bulk inversion asymmetry. Implications with respect to spin-relaxation will be discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.

Item Type: Article
Uncontrolled Keywords: NO COMMON ATOM; HETEROSTRUCTURES; RELAXATION; WELLS; GAAS-GA1-XALXAS; SUPERLATTICES; ANISOTROPY; heterojunctions; semiconductors; quantum wells; electronic band structure; spin dynamics; interface asymmetry; spin-splitting; electron subband; warping; bulk inversion asymmetry; spin relaxation
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler
Depositing User: Dr. Gernot Deinzer
Date Deposited: 22 Nov 2021 07:42
Last Modified: 22 Nov 2021 07:42
URI: https://pred.uni-regensburg.de/id/eprint/40836

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