Andrianov, I. and Saalfrank, Peter (2001) Vibrational relaxation rates for H on a Si(100):(2 x 1) surface: a two-dimensional model. CHEMICAL PHYSICS LETTERS, 350 (3-4). pp. 191-197. ISSN 0009-2614
Full text not available from this repository. (Request a copy)Abstract
The results of calculations based on perturbation theory of vibrational relaxation rates due to coupling to substrate phonons for hydrogen atoms adsorbed on a Si(1 0 0):(2 x 1) surface are presented. For this purpose a two-dimensional model is adopted in which both the H-Si stretching and bending motions are included. It is shown that within this model the multiphonon emission and absorption processes play a negligible role. The calculated lifetimes agree well with available experimental data. (C) 2001 Elsevier Science B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | STRETCHING MODES; ENERGY RELAXATION; HYDROGEN; DESORPTION; DYNAMICS; STM; EXCITATION; |
| Subjects: | 500 Science > 540 Chemistry & allied sciences |
| Divisions: | Chemistry and Pharmacy > Institut für Physikalische und Theoretische Chemie |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 23 Nov 2021 06:17 |
| Last Modified: | 23 Nov 2021 06:17 |
| URI: | https://pred.uni-regensburg.de/id/eprint/40862 |
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