Ganichev, Sergey D. and Ketterl, H. and Prettl, W. and Merkulov, I. A. and Perel, V. I. and Yassievich, I. N. and Malyshev, A. V. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. PHYSICAL REVIEW B, 63 (20): 201204. ISSN 2469-9950, 2469-9969
Full text not available from this repository.Abstract
A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10 000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g factor in the order of several tens depending on impurity.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ACCEPTOR CENTER; GERMANIUM; LOCALIZATION; TRANSPORT; PHYSICS; GAP; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 25 Jan 2022 16:20 |
| Last Modified: | 25 Jan 2022 16:20 |
| URI: | https://pred.uni-regensburg.de/id/eprint/41432 |
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