Olbrich, Alexander and Ebersberger, Bernd and Boit, Christian and Vancea, Johann and Hoffmann, Horst and Altmann, Hans and Gieres, Guenther and Wecker, Joachim (2001) Oxide thickness mapping of ultrathin Al2O3 at nanometer scale with conducting atomic force microscopy. APPLIED PHYSICS LETTERS, 78 (19). pp. 2934-2936. ISSN 0003-6951
Full text not available from this repository. (Request a copy)Abstract
In this work, we introduce conducting atomic force microscopy (C-AFM) for the quantitative electrical characterization of ultrathin Al2O3 films on a nanometer scale length. By applying a voltage between the AFM tip and the conductive Co substrate direct tunneling currents in the sub pA range are measured simultaneously to the oxide surface topography. From the microscopic I-V characteristics the local oxide thickness can be obtained with an accuracy of 0.03 nm. A conversion scheme was developed, which allows the calculation of three-dimensional maps of the local electrical oxide thickness with sub-angstrom thickness resolution and nanometer lateral resolution from the tunneling current images. Local tunneling current variations of up to three decades are correlated with the topography and local variations of the electrical oxide thickness of only a few angstroms. (C) 2001 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 31 Jan 2022 09:24 |
| Last Modified: | 31 Jan 2022 09:24 |
| URI: | https://pred.uni-regensburg.de/id/eprint/41436 |
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