Litvinov, D. and Rosenauer, A. and Gerthsen, D. and Preis, H. and Bauer, S. and Kurtz, E. (2001) On the origin of the "coffee-bean" contrast in transmission electron microscopy images of CdSe/ZnSe quantum dot structures. JOURNAL OF APPLIED PHYSICS, 89 (7). pp. 4150-4155. ISSN 0021-8979
Full text not available from this repository. (Request a copy)Abstract
The origin of the "coffee-bean" strain contrast is studied, that is observed in the plan-view transmission electron microscopy (TEM) images of CdSe/ZnSe quantum dot structures. The samples were grown by two different methods: standard molecular-beam epitaxy at 350 degreesC and atomic layer epitaxy at 230 degreesC with annealing at 340 degreesC after the CdSe deposition. The nominal CdSe thickness was above 3 ML. In situ reflection high energy electron diffraction during the growth or during the annealing shows the transition from the two- (2D) into the three-dimensional (3D) surface morphology for both samples. The coffee-bean contrast is usually assigned to three-dimensional islands which are generated after the morphological 2D/3D transition. It is found that the coffee-bean contrast in plan-view TEM images is alternatively associated with pairs of stacking faults on {111} lattice planes which are inclined against each other. The stacking faults, which are bound by Shockley partial dislocations, are preferably generated in the vicinity of the Cd-rich regions (large islands) of the CdZnSe layer where Cd concentrations of more than 40% are found. (C) 2001 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ZNSE/GAAS(001); RELAXATION; GAAS(001); |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 02 Feb 2022 12:36 |
| Last Modified: | 02 Feb 2022 12:36 |
| URI: | https://pred.uni-regensburg.de/id/eprint/41505 |
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