Hoelzl, Robert and Huber, A. and Fabry, L. and Range, Klaus-Jürgen and Blietz, M. (2001) Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 72 (3). pp. 351-356. ISSN 0947-8396, 1432-0630
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The integrity of ultrathin gate oxides was investigated as a function of polished and epitaxial wafer surfaces with various gettering sites. After intentional contamination of wafers with 1 x 10(11) atoms/cm(2) and 5 x 10(12) atoms/cm(2) Cu and Ni by a spin-on technique of high reproducibility, we performed 0.18-mum low-thermal-budget CMOS process runs. Thermal oxides were grown with various gate oxides in the range of 5-17 nm. After a MOS-capacitor fabrication we applied a ramped current-density test to study the gate-oxide integrity. Generally, thinner gate oxides exhibited a much more robust behavior than thicker oxides. The gate-oxide integrity was strongly influenced by different gettering sites. Although a higher Ni contamination led to a higher number of gate-oxide failures. Cu contamination exhibited a higher impact on the gate-oxide integrity than Ni.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SILICON; BREAKDOWN; COPPER; IRON; IMPACT; |
| Subjects: | 500 Science > 540 Chemistry & allied sciences |
| Divisions: | Chemistry and Pharmacy > Institut für Anorganische Chemie > Alumni or Retired Professors > Prof. Dr. Klaus-Jürgen Range |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 09 Feb 2022 14:09 |
| Last Modified: | 09 Feb 2022 14:09 |
| URI: | https://pred.uni-regensburg.de/id/eprint/41677 |
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