Bachhofer, Harald and Reisinger, H. and Bertagnolli, E. and von Philipsborn, Henning (2001) Transient conduction in multidielectric silicon-oxide-nitride-oxide semiconductor structures. JOURNAL OF APPLIED PHYSICS, 89 (5). pp. 2791-2800. ISSN 0021-8979
Full text not available from this repository. (Request a copy)Abstract
The voltage- and time-dependence of the tunneling currents in polysilicon-oxide-nitride-oxide semiconductor structures have been investigated. Electron and hole contributions were separated using a shallow junction technique. The standard tunneling model for charge injection was successfully applied to describe the observed threshold voltage shifts. For both positive and negative gate voltages, the time-dependence of the current density through the tunneling oxide is given by a simple analytical equation. This equation is characterized by an initial time constant and an asymptotic t(-1)-dependence. At large programming times the current density follows the t(-1)-dependence, independent of the tunneling oxide thickness and applied voltage. Under positive polarity (write) electrons are injected from the substrate. Under negative polarity (erase) and previous injection electron back-tunneling rather than hole injection is dominant at the beginning of erasing. At the end of erasing, steady-state conduction can be dominated either by electrons or holes, depending on the applied voltage. (C) 2001 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MONOS MEMORY DEVICES; CHARGE TRANSPORT; VOLTAGE; EEPROM; SI3N4; FILMS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 14 Feb 2022 07:43 |
| Last Modified: | 14 Feb 2022 07:43 |
| URI: | https://pred.uni-regensburg.de/id/eprint/41701 |
Actions (login required)
 |
View Item |
