Novak, V. and Cukr, M. and Schowalter, D. and Prettl, Wilhelm (2000) Electron mobility measurement in n-GaAs at low-temperature impurity breakdown. PHYSICAL REVIEW B, 62 (24). pp. 16768-16772. ISSN 1098-0121, 1550-235X
Full text not available from this repository.Abstract
Using a combination of the standard Hall technique and the photoluminescence imaging of galvanomagentic transport, free-electron density and mobility have been measured in the regime of filamentary current flow after the electric breakdown of n-GaAs at the temperature of liquid helium. The data show good agreement with those acquired by the geometrical magnetoresistance effect and by the optical Hall angle measurement. By comparing the mobilities obtained by independent techniques, arguments have been found indicating significant neutral impurity scattering in the post-breakdown regime. In the pre-breakdown regime variable range hopping has been concluded as the dominant transport mechanism.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MONTE-CARLO SIMULATION; CURRENT FILAMENTATION; MAGNETORESISTANCE; TRANSITION; REGIME; GE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 07 Mar 2022 14:57 |
| Last Modified: | 07 Mar 2022 14:57 |
| URI: | https://pred.uni-regensburg.de/id/eprint/41979 |
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