Schwarz, G. and Lehmann, C. and Reimann, A. and Schoell, E. and Hirschinger, J. and Prettl, Wilhelm and Novak, V. (2000) Current filamentation in n-GaAs thin films with different contact geometries. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15 (6). pp. 593-603. ISSN 0268-1242
Full text not available from this repository. (Request a copy)Abstract
We investigate current filamentation in n-GaAs in the regime of low-temperature impurity breakdown for different sample and contact geometries. Computer simulations based on a dynamic microscopic model are compared with spatially resolved measurements in thin epitaxial layers. By varying the applied bias, load resistance and magnetic field, one can effectively control the shape and the size of the filaments in rectangular samples with two point contacts. Multistability and hysteresis due to the successive symmetry-breaking formation of multiple filaments are found in Corbino discs upon sweep-up and sweep-down of the voltage and explained by our model.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | TEMPERATURE IMPURITY BREAKDOWN; BREATHING CURRENT FILAMENTS; MONTE-CARLO SIMULATION; P-TYPE GERMANIUM; IMPACT-IONIZATION; NONLINEAR DYNAMICS; SPATIAL STRUCTURE; MAGNETIC-FIELDS; SEMICONDUCTORS; OSCILLATIONS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 03 May 2022 08:27 |
| Last Modified: | 03 May 2022 08:27 |
| URI: | https://pred.uni-regensburg.de/id/eprint/42470 |
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