Bel'kov, V. V. and Hirschinger, J. and Schowalter, D. and Niedernostheide, F. J. and Ganichev, Sergey D. and Prettl, Wilhelm and Mac Mathuna, D. and Novak, V. (2000) Microwave-induced patterns in n-GaAs and their photoluminescence imaging. PHYSICAL REVIEW B, 61 (20). pp. 13698-13702. ISSN 1098-0121, 1550-235X
Full text not available from this repository.Abstract
Using the technique of photoluminescence imaging, self-organized patterns of high-electron density in homogeneous n-GaAs layers under homogeneous microwave irradiation are studied. The structures are shown to be analogous to current filaments in a static electric field. The symmetry of the microwave induced patterns is not constrained by the current feeding electrodes. It is, however, concluded that a feedback mechanism exists between the formation of high-conducting structures and the homogeneity of the incident microwave irradiation.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | IMPURITY BREAKDOWN; LUMINESCENCE; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 03 May 2022 09:32 |
| Last Modified: | 03 May 2022 09:32 |
| URI: | https://pred.uni-regensburg.de/id/eprint/42486 |
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