As, D. J. and Frey, T. and Schikora, D. and Lischka, K. and Cimalla, V. and Pezoldt, J. and Goldhahn, R. and Kaiser, S. and Gebhardt, W. (2000) Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates. APPLIED PHYSICS LETTERS, 76 (13). pp. 1686-1688. ISSN 0003-6951
Full text not available from this repository. (Request a copy)Abstract
The molecular beam epitaxy of cubic GaN on Si(001) substrates, which were covered by a 4 nm thick beta-SiC layer, is reported. The structural and optical properties of the cubic GaN epilayers were studied by transmission electron microscopy, high-resolution x-ray diffraction, and low-temperature photoluminescence measurements. We find clear evidence for the growth of cubic GaN layers almost free of hexagonal inclusions. The density of extended defects and the near band edge photoluminescence of the cubic GaN layers grown at substrate temperatures of 835 degrees C is comparable to that of high quality cubic GaN epilayers grown by molecular beam epitaxy on GaAs (001) substrates. (C) 2000 American Institute of Physics. [S0003-6951(00)03413-6].
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | LAYERS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 24 May 2022 08:49 |
| Last Modified: | 24 May 2022 08:49 |
| URI: | https://pred.uni-regensburg.de/id/eprint/42726 |
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