Arakawa, T. and Shiogai, J. and Maeda, M. and Ciorga, M. and Utz, M. and Schuh, D. and Niimi, Y. and Kohda, M. and Nitta, J. and Bougeard, D. and Weiss, D. and Kobayashi, K. (2020) Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements. PHYSICAL REVIEW B, 102 (4): 045308. ISSN 2469-9950, 2469-9969
Full text not available from this repository. (Request a copy)Abstract
Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga,Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune the types of tunneling process. By changing the bias voltage in a single device, we successively address the conventional direct tunneling, the excess current conduction through the mid-gap localized states, and the thermal excitation current conduction. These observations lead to a proper comparison of the bias dependent Fano factors. While the Fano factor is unity for the direct tunneling, it is pronouncedly reduced in the excess current region. Thus, we have succeeded in evaluating several types of conduction process with the Fano factor in a single junction.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ELECTRICAL DETECTION; TRANSPORT; SUPPRESSION; UNIVERSALITY; PRECESSION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard Physics > Institute of Experimental and Applied Physics > Chair Professor Weiss > Group Dieter Weiss |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 18 Mar 2021 07:57 |
| Last Modified: | 18 Mar 2021 07:57 |
| URI: | https://pred.uni-regensburg.de/id/eprint/44177 |
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