Prager, Michael and Trottmann, Michaela and Schmidt, Jaydean and Ebnet, Lucia and Schuh, Dieter and Bougeard, Dominique (2021) Gating of Two-Dimensional Electron Systems in (In,Ga)As/(In,Al)As Heterostructures: The Role of Intrinsic (In,Al)As Deep Donor Defects. PHYSICAL REVIEW APPLIED, 16 (6): 064028. ISSN 2331-7019
Full text not available from this repository. (Request a copy)Abstract
We present an analysis of gated (In, Ga)As/(In, Al)As heterostructures, a device platform to realize spin-orbitronic functionalities in semiconductors. The phenomenological model deduced from our magnetotransport experiments allows us to correlate the gate response of the two-dimensional electron systems with the design parameters of the heterostructure, in particular the indium concentration. We explain the occurrence of metastable electrostatic configurations showing reduced capacitive coupling and provide gate-operation strategies to reach classical field-effect control in such heterostructures. Our study highlights the role of the intrinsic (In, Al)As deep donor defects, as they govern the dynamics of the electrostatic response to gate-voltage variations through charge trapping and unintentional tunneling.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | TOPOLOGICAL SUPERCONDUCTIVITY; SCATTERING MECHANISMS; QUANTUM-WELLS |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 07 Jul 2022 09:30 |
| Last Modified: | 07 Jul 2022 09:30 |
| URI: | https://pred.uni-regensburg.de/id/eprint/45939 |
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