Two-Dimensional Semimetal HgTe in 14-nm-Thick Quantum Wells

Vasil'ev, N. N. and Kvon, Z. D. and Mikhailov, N. N. and Ganichev, Sergey D. (2021) Two-Dimensional Semimetal HgTe in 14-nm-Thick Quantum Wells. JETP LETTERS, 113 (7). pp. 466-470. ISSN 0021-3640, 1090-6487

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Abstract

A two-dimensional semimetal is discovered in the (013) HgTe quantum well with a thickness of d = 14 nm, which is much smaller than those previously studied. It is found that such semimetal is characterized by the same band overlap as the wells with d =18-22 nm having the same orientation, but here the impurity scattering of both electrons and holes is much more pronounced. The electron cyclotron photoresistance is measured as a function of the electron density (N-s) and it is shown that the amplitude of the electron cyclotron photoresistance decreases with decreasing density, and the electron cyclotron photoresistance is not detected at N-s < 5 x 10(9) cm(-2). Thus, the two-dimensional semimetal under study does not exhibit the N-s-independent electron cyclotron photoresistance, which was earlier observed in the two-dimensional semimetal arising near the (100) surface. This is assumingly due to a significantly lower (by more than an order of magnitude) electron mobility in the system under study.

Item Type: Article
Uncontrolled Keywords: SCATTERING
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Depositing User: Dr. Gernot Deinzer
Date Deposited: 01 Sep 2022 09:25
Last Modified: 01 Sep 2022 09:25
URI: https://pred.uni-regensburg.de/id/eprint/47194

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