Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb1-xSnxTe

Galeeva, Alexandra V. and Belov, Dmitry A. and Kazakov, Aleksei S. and Ikonnikov, Anton V. and Artamkin, Alexey I. and Ryabova, Ludmila I. and Volobuev, Valentine V. and Springholz, Gunther and Danilov, Sergey N. and Khokhlov, Dmitry R. (2021) Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb1-xSnxTe. NANOMATERIALS, 11 (12): 3207. ISSN 2079-4991

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Abstract

Topological crystalline insulators form a class of semiconductors for which surface electron states with the Dirac dispersion relation are formed on surfaces with a certain crystallographic orientation. Pb1-xSnxTe alloys belong to the topological crystalline phase when the SnTe content x exceeds 0.35, while they are in the trivial phase at x < 0.35. For the surface crystallographic orientation (111), the appearance of topologically nontrivial surface states is expected. We studied the photoelectromagnetic (PEM) effect induced by laser terahertz radiation in Pb1-xSnxTe films in the composition range x = (0.11-0.44), with the (111) surface crystallographic orientation. It was found that in the trivial phase, the amplitude of the PEM effect is determined by the power of the incident radiation, while in the topological phase, the amplitude is proportional to the flux of laser radiation quanta. A possible mechanism responsible for the effect observed presumes damping of the thermalization rate of photoexcited electrons in the topological phase and, consequently, prevailing of electron diffusion, compared with energy relaxation.

Item Type: Article
Uncontrolled Keywords: STATES; topological crystalline insulator; terahertz radiation; photoelectromagnetic effect
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics
Depositing User: Dr. Gernot Deinzer
Date Deposited: 13 Sep 2022 05:07
Last Modified: 13 Sep 2022 05:07
URI: https://pred.uni-regensburg.de/id/eprint/47687

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