Erkensten, Daniel and Brem, Samuel and Wagner, Koloman and Gillen, Roland and Perea-Causin, Rauel and Ziegler, Jonas D. and Taniguchi, Takashi and Watanabe, Kenji and Maultzsch, Janina and Chernikov, Alexey and Malic, Ermin (2021) Dark exciton-exciton annihilation in monolayer WSe2. PHYSICAL REVIEW B, 104 (24): L241406. ISSN 2469-9950, 2469-9969
Full text not available from this repository.Abstract
The exceptionally strong Coulomb interaction in semiconducting transition-metal dichalcogenides (TMDs) gives rise to a rich exciton landscape consisting of bright and dark exciton states. At elevated densities, excitons can interact through exciton-exciton annihilation (EEA), an Auger-like recombination process limiting the efficiency of optoelectronic applications. Although EEA is a well-known and particularly important process in atomically thin semiconductors determining exciton lifetimes and affecting transport at elevated densities, its microscopic origin has remained elusive. In this joint theory-experiment study combining microscopic and material-specific theory with time- and temperature-resolved photoluminescence measurements, we demonstrate the key role of dark intervalley states that are found to dominate the EEA rate in monolayer WSe2. We reveal an intriguing, characteristic temperature dependence of Auger scattering in this class of materials with an excellent agreement between theory and experiment. Our study provides microscopic insights into the efficiency of technologically relevant Auger scattering channels within the remarkable exciton landscape of atomically thin semiconductors.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | CARRIER MULTIPLICATION; TEMPERATURE-DEPENDENCE; BAND-STRUCTURE; SEMICONDUCTOR; DYNAMICS; BIEXCITONS; TOOL |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 13 Sep 2022 05:52 |
| Last Modified: | 13 Sep 2022 05:52 |
| URI: | https://pred.uni-regensburg.de/id/eprint/47733 |
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