Kamerbeek, A. M. and Hoegl, P. and Fabian, J. and Banerjee, T. (2015) Electric Field Control of Spin Lifetimes in Nb-SrTiO3 by Spin-Orbit Fields. PHYSICAL REVIEW LETTERS, 115 (13): 136601. ISSN 0031-9007, 1079-7114
Full text not available from this repository. (Request a copy)Abstract
We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb-SrTiO3 with Co/AlOx spin injection contacts at room temperature. The in-plane spin lifetime tau(parallel to), as well as the ratio of the out-of-plane to in-plane spin lifetime tau(perpendicular to)/tau(parallel to), is manipulated by the built-in electric field at the semiconductor surface, without any additional gate contact. The origin of this manipulation is attributed to Rashba spin orbit fields (SOFs) at the Nb-SrTiO3 surface and shown to be consistent with theoretical model calculations based on SOF spin flip scattering. Additionally, the junction can be set in a high or low resistance state, leading to a nonvolatile control of tau(perpendicular to)/tau(parallel to), consistent with the manipulation of the Rashba SOF strength. Such room temperature electric field control over the spin state is essential for developing energy-efficient spintronic devices and shows promise for complex oxide based (spin) electronics.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FERROMAGNETISM; TRANSPORT; SRTIO3; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 07 Jun 2019 08:03 |
| Last Modified: | 07 Jun 2019 08:03 |
| URI: | https://pred.uni-regensburg.de/id/eprint/4814 |
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