Anharmonic line shift and linewidth of the Raman mode in covalent semiconductors

Lang, G. and Karch, K. and Schmitt, M. and Pavone, P. and Mayer, A. P. and Wehner, R. K. and Strauch, Dieter (1999) Anharmonic line shift and linewidth of the Raman mode in covalent semiconductors. PHYSICAL REVIEW B, 59 (9). pp. 6182-6188. ISSN 1098-0121, 1550-235X

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Abstract

Combining density-functional perturbation theory with the frozen-phonon approach, the anharmonic shift of the Raman frequency of the covalent semiconductors diamond and silicon are determined ab initio. The temperature dependence of the Raman frequency and the contribution of zero-point motion are calculated as well as the Raman linewidth. Corresponding results for germanium have been obtained with the assumption that the quartic anharmonic force constants may be approximated by those of silicon. [S0163-1829(99)13305-8].

Item Type: Article
Uncontrolled Keywords: TEMPERATURE-DEPENDENCE; MOLECULAR-DYNAMICS; OPTICAL PHONONS; ISOTOPIC-DISORDER; DIAMOND; SCATTERING; SILICON; SPECTRUM; SI; BRILLOUIN;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Dieter Strauch
Depositing User: Dr. Gernot Deinzer
Date Deposited: 15 Nov 2022 13:36
Last Modified: 15 Nov 2022 13:36
URI: https://pred.uni-regensburg.de/id/eprint/48495

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