Wittmann, J. and Bergholz, W. and Hoffmann, H. (1999) Elymat measurement of intentionally contaminated and dry etched wafers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146 (1). pp. 313-320. ISSN 0013-4651, 1945-7111
Full text not available from this repository.Abstract
In the manufacturing of megabit dynamic random access memories (4 M DRAMs) the influence of dry etching processes on refresh failures is often observed. A principal reason for refresh failures are leakage currents in the isolating p-n junction. The effects of intentional and reactive ion etching (RIE)-induced metal contamination on the leakage currents and diffusion currents measured in the Elymat have been systematically studied. It has been shown that this technique is a convenient and process relevant monitoring tool for RIE- induced contamination by Fe, Mo, Cu, and Ni with a spatial resolution capability. (C) 1999 The Electrochemical Society. S0013-4651(97)08-031-2. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | ; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 30 Nov 2022 09:43 |
| Last Modified: | 30 Nov 2022 09:43 |
| URI: | https://pred.uni-regensburg.de/id/eprint/48684 |
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