Discontinuities and hysteresis in the I-V characteristics of n-GaAs at low temperatures

Klimenta, H. and Alshuth, M. and Prettl, Wilhelm and Kostial, H. (1999) Discontinuities and hysteresis in the I-V characteristics of n-GaAs at low temperatures. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 176 (2). pp. 1017-1024. ISSN 0031-8965,

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Abstract

We present experimental investigations of current filamentation in n-GaAs films in the regime of low-temperature impurity breakdown. Using a laser-scanning microscope, we were able to reconstruct current filaments in biasing regions of multistability. It is shown that discontinuities and hysteresis frequently observed in current-voltage characteristics are due to the interaction of filaments with material imperfections. In particular filaments remain in energetically unfavourable configurations when squeezed or pinned by defects.

Item Type: Article
Uncontrolled Keywords: FILAMENTARY CURRENT FLOW; SPATIAL STRUCTURE; MAGNETIC-FIELD; VISUALIZATION;
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl
Depositing User: Dr. Gernot Deinzer
Date Deposited: 06 Dec 2022 13:16
Last Modified: 06 Dec 2022 13:16
URI: https://pred.uni-regensburg.de/id/eprint/48813

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