Schomburg, Ekkehard and Brandl, S. and Renk, Karl F. and Ledentsov, N. N. and Ustinov, V. M. and Zhukov, A. E. and Kovsh, A. R. and Egorov, A. Y. and Kyutt, R. N. and Volovik, B. V. and Kop'ev, P. S. and Alferov, Z. I. and Rosenauer, A. and Litvinov, D. and Gerthsen, D. and Pavel'ev, D. G. and Koschurinov, Y. I. (1999) Miniband transport in a semiconductor superlattice with submonolayer barriers. PHYSICS LETTERS A, 262 (4-5). pp. 396-401. ISSN 0375-9601,
Full text not available from this repository. (Request a copy)Abstract
We report on the observation of miniband transport in a GaAs/AlAs superlattice with submonolayer AlAs barriers. An X-ray analysis indicated the superlattice periodicity, and a composition analysis by a high-resolution transmission electron microscopy study revealed that the barriers contained Al rich islands (antidots). From the current-voltage characteristic we derived a miniband width (105 meV), which was significantly wider than for multilayer-thick barrier superlattices; photoluminescence spectra were consistent with miniband formation. (C) 1999 Elsevier Science B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | NEGATIVE DIFFERENTIAL CONDUCTANCE; GAAS/ALAS SUPERLATTICES; VELOCITY; HETEROSTRUCTURES; 85.30.Vw; 73.50.Fq; 73.61.-r; 68.65.+ g |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Karl F. Renk |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 13 Dec 2022 06:47 |
| Last Modified: | 13 Dec 2022 06:47 |
| URI: | https://pred.uni-regensburg.de/id/eprint/48845 |
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