Engelhardt, F. and Bornemann, L. and Koentges, M. and Meyer, T. and Parisi, J. and Pschorr-Schoberer, Evi and Hahn, B. and Gebhardt, W. and Riedl, W. and Rau, Uwe (1999) Cu(In,Ga)Se-2 solar cells with a ZnSe buffer layer: Interface characterization by quantum efficiency measurements. PROGRESS IN PHOTOVOLTAICS, 7 (6). pp. 423-436. ISSN 1062-7995,
Full text not available from this repository. (Request a copy)Abstract
We investigate Cu(In,Ga)Se-2-based solar cells with a new ZnSe buffer layer deposited by metal-organic vapour deposition and compare their electronic properties to reference cells using a standard CdS buffer layer. The best solar cell with a ZnSe buffer layer achieves an efficiency of 11.6%. We further investigate a large series of solar cells with varied thickness of both types of buffer layers by means of quantum efficiency measurements in equilibrium and under light and voltage bias, The characterization of the devices concentrates on the analysis of the collection of photogenerated holes from the buffer layer. We introduce a nero method to determine the recombination probability of holes at the buffer/absorber ber interface, We find a similar interface recombination probability of about 40% for both devices, those with a ZnSe buffer layer and those with a CdS buffer layer. An anomalous enhancement of the quantum efficiency measured under current bias is ascribed to a barrier modulation effect which is caused by light absorbed in the buffer layer. Copyright (C) 1999 John Wiley & Sons, Ltd.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | TRANSPORT; FILMS; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 13 Dec 2022 10:53 |
| Last Modified: | 13 Dec 2022 10:53 |
| URI: | https://pred.uni-regensburg.de/id/eprint/48903 |
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