Paessler, R. and Griebl, E. and Riepl, H. and Lautner, G. and Bauer, S. and Preis, H. and Gebhardt, W. and Buda, B. and As, D. J. and Schikora, D. and Lischka, K. and Papagelis, K. and Ves, S. (1999) Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films. JOURNAL OF APPLIED PHYSICS, 86 (8). pp. 4403-4411. ISSN 0021-8979,
Full text not available from this repository. (Request a copy)Abstract
High-quality ZnS, ZnSe, and ZnTe epitaxial films were grown on (001)-GaAs-substrates by molecular beam epitaxy. The 1s-exciton peak energy positions have been determined by absorption measurements from 2 K up to about room temperature. For ZnS and ZnSe additional high-temperature 1s-exciton energy data were obtained by reflectance measurements performed from 300 up to about 550 K. These complete E-1s(T) data sets are fitted using a recently developed analytical model. The high-temperature slopes of the individual E-1s(T) curves and the effective phonon temperatures of ZnS, ZnSe, and ZnTe are found to scale almost linearly with the corresponding zero-temperature energy gaps and the Debye temperatures, respectively. Various ad hoc formulas of Varshni type, which have been invoked in recent articles for numerical simulations of restricted E-1s(T) data sets for cubic ZnS, are discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)06420-8].
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | MULTIPLE-QUANTUM WELLS; DIELECTRIC FUNCTION; OPTICAL-PROPERTIES; BAND-GAP; II-VI; GAAS; EPILAYERS; EDGE; SEMICONDUCTORS; ABSORPTION; |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 13 Dec 2022 14:15 |
| Last Modified: | 13 Dec 2022 14:15 |
| URI: | https://pred.uni-regensburg.de/id/eprint/48920 |
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