Hölzl, Robert and Range, Klaus-Jürgen and Fabry, L. and Huber, D. (1999) Calibrated contamination spiking method for silicon wafers in the 10(10)-10(12) atom/cm(2) range. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146 (6). pp. 2245-2253. ISSN 0013-4651, 1945-7111
Full text not available from this repository. (Request a copy)Abstract
Applying diluted iron, nickel, and copper solutions to front and back side spin-on, respectively, and to immersion spiking, we investigated the contamination mechanism of silicon wafers. The immersion procedure was found to be advantageous as a batch process, with the drawback that it can only be applied at lower concentration levels than the spin-on technique and, therefore, it was much more tedious to control. The immersion technique led to a chemisorption of metal ions on the native oxide. In comparison to iron and nickel, copper was less readily adsorbed on the wafer surface by immersion. A thermodynamic model interprets the conspicuous results of copper contamination. Spin-on spiking led to a dried film of the contamination solution on the wafer. Chemisorption processes could not bi:confirmed under the given spin-on conditions. Thus, the contamination level on the wafer was the same for nickel, iron, and copper when spiking solutions of the same concentration were used. After the metal drive-in step for nickel and copper at 800 degrees C and for iron at 1000 degrees C, a recovery rate of 50-100% was found by chemical analysis. In order to avoid cross contamination, different concentration levels or different spiking elements should not be treated in the same thermal drive-in batch process. Charge-to-breakdown measurements of capacitors were used to evaluate the influence of surface metal contamination and, after drive-in, for gettering studies. (C) 1999 The Electrochemical Society. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | STANDARD SAMPLE PREPARATION; METALLIC IMPURITIES; SURFACE; SPECTROMETRY; SEPARATION; ADSORPTION; COPPER; IONS; ETCH |
| Subjects: | 500 Science > 540 Chemistry & allied sciences |
| Divisions: | Chemistry and Pharmacy > Institut für Anorganische Chemie > Alumni or Retired Professors > Prof. Dr. Klaus-Jürgen Range |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 09 Feb 2023 06:23 |
| Last Modified: | 09 Feb 2023 06:23 |
| URI: | https://pred.uni-regensburg.de/id/eprint/49214 |
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