Electron g factor in one- and zero-dimensional semiconductor nanostructures

Kiselev, A. A. and Ivchenko, E. L. and Rössler, Ulrich (1998) Electron g factor in one- and zero-dimensional semiconductor nanostructures. PHYSICAL REVIEW B, 58 (24). pp. 16353-16359. ISSN 1098-0121, 1550-235X

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Abstract

We investigate theoretically the Zeeman effect on the lowest confined electron in quantum wires and quantum dots. A general relation is established between the symmetry of a low-dimensional system and properties of the electron g factor tenser, g(alpha beta). The powerful method used earlier to calculate the transverse g factor in quantum wells is extended to one-dimensional (1D) and OD zinc-blende-based nanostructures and analytical expressions are derived in the frame of Kane's model for the g factors in quantum wells, cylindrical wires, and spherical dots. The role of dimensionality is illustrated on two particular heteropairs, GaAs/A1(x)Ga(1-x)As and Ga1-xInxAs/InP. The efficiency of the developed theoretical concept is demonstrated by calculating the three principal values of the g factor tenser in rectangular quantum wires in dependence on the wire width to establish also the connection with the 2D case. [S0163-1829(98)01547-1].

Item Type: Article
Uncontrolled Keywords: QUANTUM-WELLS
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Theroretical Physics > Alumni or Retired Professors > Group Ulrich Rössler
Depositing User: Dr. Gernot Deinzer
Date Deposited: 09 Feb 2023 07:15
Last Modified: 09 Feb 2023 07:15
URI: https://pred.uni-regensburg.de/id/eprint/49261

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