Hägele, D. and Oestreich, M. and Rühle, W. W. and Nestle, Nikolaus and Eberl, K. (1998) Spin transport in GaAs. APPLIED PHYSICS LETTERS, 73 (11). pp. 1580-1582. ISSN 0003-6951, 1077-3118
Full text not available from this repository.Abstract
We present a spectroscopic method for studying spin transport in semiconductors. Our time-resolved experiments have an important implication for spin electronics as they show that spin-polarized electron drift is possible in semiconductors over typical device lengths in high electric fields. We demonstrate an almost complete conservation of the orientation of the electron spin during transport in GaAs over a distance as long as 4 mu m and fields up to 6 kV/cm. (C) 1998 American Institute of Physics.
| Item Type: | Article |
|---|---|
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 16 Feb 2023 08:01 |
| Last Modified: | 16 Feb 2023 08:01 |
| URI: | https://pred.uni-regensburg.de/id/eprint/49501 |
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