Hahn, Berthold and Pschorr-Schoberer, E. and Griebl, E. and Kastner, M. and Gebhardt, Wolfgang (1998) Metalorganic chemical vapor deposition of ZnSe films on glass and GaAs(1 1 1) substrates. JOURNAL OF CRYSTAL GROWTH, 191 (1-2). pp. 65-71. ISSN 0022-0248, 1873-5002
Full text not available from this repository. (Request a copy)Abstract
We studied the low-temperature growth and doping of polycrystalline ZnSe by MOCVD using ditertiary-butyl-selenide (DtBSe) and dimethylzinc-triethylamine (DMZn-TEN) as precursors. With these alkyls a deposition of ZnSe at less than 400 degrees C is possible without using the toxic H2Se. Polycrystalline ZnSe grows in [111] direction, therefore also the deposition on GaAs(111) substrates was studied. Polycrystalline ZnSe remained semi-insulating after doping with Ga and Cl and can therefore not replace ZnO as front electrode material. The final goal of this study is the application of ZnSe as buffer material in polycrystalline Cu(In,Ga)Se-2 (CIGS) solar cells in order to substitute the usually used CdS buffer. By using MOCVD grown ZnSe as buffer layer Cd-free CIS-based solar cells with 11% efficiency have been fabricated. (C) 1998 Elsevier Science B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | OPTICAL-PROPERTIES; PHASE EPITAXY; SOLAR-CELLS; DOPED ZNSE; THIN-FILMS; GROWTH; polycrystalline ZnSe; MOCVD; buffer material; solar cell |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 23 Feb 2023 11:35 |
| Last Modified: | 23 Feb 2023 11:35 |
| URI: | https://pred.uni-regensburg.de/id/eprint/49700 |
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