X-ray characterization of an Esaki-Tsu superlattice and transport properties

Grenzer, J. and Schomburg, Ekkehard and Lingott, I. and Ignatov, A. A. and Renk, Karl F. and Pletsch, U. and Zeimer, U. and Melzer, B. J. and Ivanov, S. and Schaposchnikov, S. and Kop'ev, P. S. and Pavel'ev, D. G. and Koschurinov, Y. (1998) X-ray characterization of an Esaki-Tsu superlattice and transport properties. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 13 (7). pp. 733-738. ISSN 0268-1242, 1361-6641

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Abstract

We have studied, by x-ray scattering, structural parameters of a short-period GaAs/AlAs superlattice and related the parameters to electric transport properties. Our results, for a superlattice consisting of 100 periods of about ten GaAs and seven AlAs monolayers in turn, indicate that an interface roughness of about 0.3 nm (thickness of one monolayer) may be responsible for a remarkable reduction of the electron mobility for the transport along the superlattice axis.

Item Type: Article
Uncontrolled Keywords: NEGATIVE DIFFERENTIAL CONDUCTANCE; SEMICONDUCTOR SUPERLATTICES; GAAS/ALAS SUPERLATTICES; BLOCH OSCILLATIONS; SCATTERING; ELECTRONS; DIFFRACTION
Subjects: 500 Science > 530 Physics
Divisions: Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Karl F. Renk
Depositing User: Dr. Gernot Deinzer
Date Deposited: 21 Feb 2023 07:59
Last Modified: 21 Feb 2023 07:59
URI: https://pred.uni-regensburg.de/id/eprint/49719

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