Novak, V. and Hirschinger, J. and Prettl, Wilhelm and Niedernostheide, F.-J. (1998) Current filamentation in point contact geometry and its 2D stationary model. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 13 (7). pp. 756-761. ISSN 0268-1242, 1361-6641
Full text not available from this repository.Abstract
Two-dimensional reconstructions of the filamentary current flow are shown, obtained by the spatially resolved photoluminescence of a sample of n-GaAs epitaxial layer with two point contacts. A mathematical model is constructed, based on a bistability of the local conductivity controlled by the local electric field strength. The interface between the high and low conductive states is assumed to occur always at a constant critical value of the field strength. Corresponding mathematical description of the model leads to the nonlinear Laplace free boundary problem. Its two-dimensional numerical solution is shown to satisfactorily reproduce the main characteristics of the filament observed in the experiment.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | TEMPERATURE IMPURITY BREAKDOWN; N-TYPE GAAS; SPATIAL STRUCTURE; SEMICONDUCTORS; OSCILLATIONS; DYNAMICS; FIELD |
| Subjects: | 500 Science > 530 Physics |
| Divisions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl |
| Depositing User: | Dr. Gernot Deinzer |
| Date Deposited: | 21 Feb 2023 08:25 |
| Last Modified: | 21 Feb 2023 08:25 |
| URI: | https://pred.uni-regensburg.de/id/eprint/49720 |
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